MJD44H11-1G 查看數據表（PDF） - ON Semiconductor

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MJD44H11-1G

Complementary Power Transistors

ON Semiconductor 

MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)

ELECTRICAL CHARACTERISTICS

(TA = 25_C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted)

Characteristic

Symbol

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 30 mA, IB = 0)

Collector Cutoff Current

(VCE = Rated VCEO, VBE = 0)

Emitter Cutoff Current

(VEB = 5 Vdc)

ON CHARACTERISTICS

Collector−Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.4 Adc)

Base−Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

DC Current Gain

(VCE = 1 Vdc, IC = 2 Adc)

DC Current Gain

(VCE = 1 Vdc, IC = 4 Adc)

DYNAMIC CHARACTERISTICS

Collector Capacitance

(VCB = 10 Vdc, ftest = 1 MHz)

VCEO(sus)

ICES

IEBO

VCE(sat)

VBE(sat)

hFE

Ccb

MJD44H11, NJVMJD44H11G,/T4G/RLG

MJD45H11, NJVMJD45H11T4G/RLG

Gain Bandwidth Product

fT

(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) MJD44H11, NJVMJD44H11G,/T4G/RLG

MJD45H11, NJVMJD45H11T4G/RLG

SWITCHING TIMES

Delay and Rise Times

(IC = 5 Adc, IB1 = 0.5 Adc)

MJD44H11, NJVMJD44H11G,/T4G/RLG

MJD45H11, NJVMJD45H11T4G/RLG

td + tr

Storage Time

ts

(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)

MJD44H11, NJVMJD44H11G,/T4G/RLG

MJD45H11, NJVMJD45H11T4G/RLG

Fall Time

tf

(IC = 5 Adc, IB1 = IB2 = 0.5 Adc

MJD44H11, NJVMJD44H11G,/T4G/RLG

MJD45H11, NJVMJD45H11T4G/RLG

Min Typ Max Unit

80

Vdc

1.0

mA

1.0

mA

1

Vdc

1.5 Vdc

60

−

40

pF

45

130

MHz

85

90

ns

300

135

ns

500

500

ns

140

100

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