MJD44H11-1G 查看數據表（PDF） - ON Semiconductor

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MJD44H11-1G

Complementary Power Transistors

ON Semiconductor 

MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)

1000

150°C

25°C

100 −55°C

VCE = 1 V

1000

150°C

25°C

−55°C

100

VCE = 1 V

10

0.01

0.1

1

10

IC, COLLECTOR CURRENT (A)

Figure 4. MJD44H11 DC Current Gain

10

0.01

0.1

1

10

IC, COLLECTOR CURRENT (A)

Figure 5. MJD45H11 DC Current Gain

1000

150°C

25°C

100 −55°C

VCE = 4 V

1000

150°C

25°C

−55°C

100

VCE = 4 V

10

0.01

0.1

1

10

IC, COLLECTOR CURRENT (A)

Figure 6. MJD44H11 DC Current Gain

0.8

0.7 IC/IB = 20

0.6

150°C

0.5

0.4

0.3

25°C

0.2

−55°C

0.1

0

0.01

0.1

1

10

IC, COLLECTOR CURRENT (A)

Figure 8. MJD44H11 Saturation Voltage

VCE(sat)

10

0.01

0.1

1

10

IC, COLLECTOR CURRENT (A)

Figure 7. MJD45H11 DC Current Gain

0.8

0.7 IC/IB = 20

0.6

−55°C

0.5

0.4

25°C

0.3

150°C

0.2

0.1

0

0.01

0.1

1

10

IC, COLLECTOR CURRENT (A)

Figure 9. MJD45H11 Saturation Voltage

VCE(sat)

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5

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