MJE2901T 查看數據表（PDF） - Inchange Semiconductor

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MJE2901T

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

MJE2901T

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO = -60V(Min)

·High DC Current Gain-

: hFE= 25-100@IC= -3A

·Complement to Type MJE2801T

APPLICATIONS

·Designed for use as an output device in complementary

audio amplifiers up to 35 watts music power per channel.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-4

V

IC

Collector Current-Continuous

-10

A

IBB

Base Current-Continuous

Collector Power Dissipation

PC

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-5

A

75

W

150

℃

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX

1.67

UNIT

℃/W

isc Website：www.iscsemi.cn

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