MJE2901T 查看數據表（PDF） - Inchange Semiconductor

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MJE2901T

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

MJE2901T

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -200mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=B -0.4A

VBE(on) Base-Emitter On Voltage

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC= -3A ; VCE= -2V

VCB= -60V; IE= 0

VCB= -60V; IE= 0;TC= 150℃

VEB= -4V; IC=0

hFE

DC Current Gain

IC= -3A ; VCE= -2V

MIN TYP. MAX UNIT

-60

V

-1.1

V

-1.4

V

-0.1

-2.0

mA

-1.0 mA

25

100

isc Website：www.iscsemi.cn

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