MJW16206 查看數據表（PDF） - ON Semiconductor
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MJW16206 Datasheet PDF : 12 Pages
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MJW16206
+ā24 V
U2
MC7812
R13
VI
VO
1K
+ C1
GND
100 µF
+ C2
10 µF
R7
R8 R9
2.7K
9.1K 470
R14
C7
Q2
150
110 pF
MJ11016
(IB)
Q6
2N5401
+ C3
10 µF
R16
430
R1
1K
3.9 V
R17
MDC1000A
120
Q3
MTP3055E
R5 (IC) Q5
1K
MJ11016
C6 +
100 µF
LY
C4
0.005
7
6
OSC VCC
C5
0.1
R15
10K
D2
SCANSWITCH
DAMPER
DIODE
R3
8%
OUT 1
250
GND
U1
T1
LB
R6
1K
MC1391P
2
R12 D1
470 MUR110
1W
R
4
22
T1: FERROXCUBE POT CORE #1811P3C8
T1: PRIMARY SEC. TURNS RATIO = 13:4
T1: GAPPED FOR LP = 30 µH
LB = 0.5 µH
CY = 0.01 µF
LY = 13 µH
Figure 15. High Resolution Deflection Application Simulator
CY
VCE
Q4 SCANSWITCH
HORIZ OUTPUT
TRANSISTOR
+15
ts and tf 1 µF
150 Ω 100 Ω
100 µF
MTP8P10
V(off) adjusted
to give specified
off drive
+10 V
MPF930
MPF930
VCC
250 V
IC
6.5 A
IB1
1.3 A
IB2 Per Fig. 17 & 18
RB1
7.7 Ω
RL
38 Ω
50 Ω
500 µF
Voff
150 Ω
A
MUR105
MJE210
1 µF
T.U.T
.
*IB
MTP8P10
RB1
A
MTP12N10
*IC
RL
VCC
Figure 16. Resistive Load Switching
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