MLD1N06CL(2017) 查看數據表（PDF） - ON Semiconductor
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MLD1N06CL Datasheet PDF : 8 Pages
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MLD1N06CL
Power MOSFET 1 Amp, 62
Volts, Logic Level
N−Channel DPAK
The MLD1N06CL is designed for applications that require a rugged
power switching device with short circuit protection that can be
directly interfaced to a microcontrol unit (MCU). Ideal applications
include automotive fuel injector driver, incandescent lamp driver or
other applications where a high in−rush current or a shorted load
condition could occur.
This Logic Level Power MOSFET features current limiting for
short circuit protection, integrated Gate−Source clamping for ESD
protection and integral Gate−Drain clamping for over−voltage
protection and technology for low on−resistance. No additional gate
series resistance is required when interfacing to the output of a MCU,
but a 40 kW gate pulldown resistor is recommended to avoid a floating
gate condition.
The internal Gate−Source and Gate−Drain clamps allow the device
to be applied without use of external transient suppression
components. The Gate−Source clamp protects the MOSFET input
from electrostatic voltage stress up to 2.0 kV. The Gate−Drain clamp
protects the MOSFET drain from the avalanche stress that occurs with
inductive loads. Their unique design provides voltage clamping that is
essentially independent of operating temperature.
Features
• Pb−Free Package is Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
VDSS Clamped Vdc
Drain−to−Gate Voltage (RGS = 1.0 MW)
VDGR Clamped Vdc
Gate−to−Source Voltage
− Continuous
VGS
±10
Vdc
Drain Current − Continuous
− Single Pulse
ID Self−limited Adc
IDM
1.8
Apk
Total Power Dissipation
PD
40
W
Operating and Storage Temperature Range TJ, Tstg −50 to 150 °C
Electrostatic Discharge Voltage
(Human Model)
ESD
2.0
kV
THERMAL CHARACTERISTICS
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 5 seconds
RqJC
RqJA
RqJA
TL
°C/W
3.12
100
71.4
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR−4 board using the minimum recommended
pad size.
2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.
www.onsemi.com
V(BR)DSS
62 V (Clamped)
RDS(on) TYP
750 mW
ID MAX
1.0 A
N−Channel D
R1
G
R2
4
12
3
CASE 369C
DPAK
STYLE 2
S
MARKING
DIAGRAM
YWW
L1N
06CG
Y
WW
L1N06C
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
MLD1N06CLT4
DPAK 2500 Tape & Reel
MLD1N06CLT4G DPAK 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2008
1
April, 2017 − Rev. 5
Publication Order Number:
MLD1N06CL/D
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