MLD1N06CL
UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS
Rating
Symbol
Single Pulse Drain−to−Source Avalanche Energy Starting TJ = 25°C
EAS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Internally Clamped)
(ID = 20 mAdc, VGS = 0 Vdc)
(ID = 20 mAdc, VGS = 0 Vdc, TJ = 150°C)
Zero Gate Voltage Drain Current
(VDS = 45 Vdc, VGS = 0 Vdc)
(VDS = 45 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Source Leakage Current
(VG = 5.0 Vdc, VDS = 0 Vdc)
(VG = 5.0 Vdc, VDS = 0 Vdc, TJ = 150°C)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(ID = 250 mAdc, VDS = VGS)
(ID = 250 mAdc, VDS = VGS, TJ = 150°C)
Static Drain−to−Source On−Resistance
(ID = 1.0 Adc, VGS = 4.0 Vdc)
(ID = 1.0 Adc, VGS = 5.0 Vdc)
(ID = 1.0 Adc, VGS = 4.0 Vdc, TJ = 150°C)
(ID = 1.0 Adc, VGS = 5.0 Vdc, TJ = 150°C)
Static Source−to−Drain Diode Voltage (IS = 1.0 Adc, VGS = 0 Vdc)
Static Drain Current Limit
(VGS = 5.0 Vdc, VDS = 10 Vdc)
(VGS = 5.0 Vdc, VDS = 10 Vdc, TJ = 150°C)
Forward Transconductance (ID = 1.0 Adc, VDS = 10 Vdc)
RESISTIVE SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 25 Vdc, ID = 1.0 Adc,
VGS(on) = 5.0 Vdc, RGS = 50 W)
Fall Time
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VSD
ID(lim)
gFS
td(on)
tr
td(off)
tf
LD
LS
Value
Unit
80
mJ
Min
Typ
Max Unit
Vdc
59
62
65
59
62
65
mAdc
−
0.6
5.0
−
6.0
20
mAdc
−
0.5
5.0
−
1.0
20
Vdc
1.0
1.5
2.0
0.6
−
1.6
W
−
0.63
0.75
−
0.59
0.75
−
1.1
1.9
−
1.0
1.8
−
1.1
1.5
Vdc
Adc
2.0
2.3
2.75
1.1
1.3
1.8
1.0
1.4
−
mhos
−
1.2
2.0
ms
−
4.0
6.0
−
4.0
6.0
−
3.0
5.0
nH
−
4.5
−
nH
−
7.5
−
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