MLD1N06CL(2017) 查看數據表（PDF） - ON Semiconductor
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MLD1N06CL Datasheet PDF : 8 Pages
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MLD1N06CL
4
4
VGS = 5 V
VDS = 7.5 V
3
3
ID = 1 A
2
2
150°C
25°C TJ = -50°C
1
1
0
0
0
2
4
6
8
10
-50
0
50
100
150
TJ, JUNCTION TEMPERATURE (°C)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. ID(lim) Variation
With Temperature
Figure 4. RDS(on) Variation With
Gate−To−Source Voltage
1.25
ID = 1 A
1
VGS = 4 V
0.75
VGS = 5 V
0.5
0.25
-50
0
50
100
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation With
Temperature
100
80
60
40
20
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Single Pulse Avalanche Energy
versus Junction Temperature
64
63
62
61
60
-50
0
50
100
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Drain−Source Sustaining
Voltage Variation With Temperature
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