MMBF170LT1(2004) 查看數據表（PDF） - ON Semiconductor
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MMBF170LT1 Datasheet PDF : 4 Pages
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MMBF170LT1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Gate−Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA)
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 200 mA)
On−State Drain Current (VDS = 25 Vdc, VGS = 0)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 1)
Turn−On Delay Time
Turn−Off Delay Time
(VDD = 25 Vdc, ID = 500 mA, Rgen = 50 W)
Figure 1
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
V(BR)DSS
IGSS
VGS(th)
rDS(on)
ID(off)
Ciss
td(on)
td(off)
Min
Max
Unit
60
−
Vdc
−
10
nAdc
0.8
3.0
Vdc
−
5.0
W
−
0.5
mA
−
60
pF
−
10
ns
−
10
ORDERING INFORMATION
Device
Package
Shipping†
MMBF170LT1
SOT−23 (TO−236)
10,000 Tape & Reel
MMBF170LT1G
SOT−23 (TO−236)
(Pb−Free)
3,000 Tape & Reel
MMBF170LT3
SOT−23 (TO−236)
10,000 Tape & Reel
MMBF170LT3G
SOT−23 (TO−236)
(Pb−Free)
3,000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
+25 V
PULSE
GENERATOR
50 W
125 W
Vin
40 pF
50 W 1 MW
20 dB 50 W
ATTENUATOR
TO SAMPLING
SCOPE
50 W INPUT
Vout
ton
td(on)
OUTPUT
INVERTED
Vout
INPUT
Vin 10%
(Vin AMPLITUDE 10 VOLTS)
tr
td(off)
90%
10%
50%
PULSE WIDTH
toff
tf
90%
90%
50%
Figure 1. Switching Test Circuit
Figure 2. Switching Waveform
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