MMBR911LT1 查看數據表（PDF） - Advanced Power Technology

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产品描述 (功能)

生产厂家

MMBR911LT1

NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR

Advanced Power Technology  

THERMAL CHARACTERISTICS

Symbol

Rating

RθJC

Thermal Resistance, Junction to Case

MMBR911LT1

MMBR911LT1G

Value

225

Unit

°C/W

ELECTRICAL SPECIFICATIONS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Symbol

Characteristics

Min.

Collector-Emitter Breakdown Voltage

V(BR)CEO

(IC=1.0 mA, IB=0)

12

Collector-Base Breakdown Voltage

V(BR)CBO

(IC=0.1 mA, IE=0)

20

Emitter-Base Breakdown Voltage

V(BR)EBO

(IE=0.1 mA, IC=0)

2.0

Collector Cutoff Current

ICBO

(VCB= 15 Vdc, IE=0)

-

ON CHARACTERISTICS

Symbol

Characteristics

Min.

DC Current Gain

HFE

(IC=30 mAdc, VCE=10 Vdc)

30

Value

Typ.

-

-

-

-

Value

Typ.

-

Max.

-

-

-

50

Max.

200

Unit

Vdc

Vdc

Vdc

nAdc

Unit

-

DYNAMIC CHARACTERISTICS

Symbol

Characteristics

Collector-Base Capacitance

Ccb

(VCB=10 Vdc, IE=0, f=1.0 MHz)

Current Gain-Bandwidth Product

fT

(VCE=10 Vdc, IC=30 mAdc, f=1.0 GHz)

Min.

-

-

Value

Typ.

-

6.0

Max.

1.0

-

Unit

pF

GHz

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Rev A 9/2005

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