MMBR911LT1 查看數據表（PDF） - Advanced Power Technology

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产品描述 (功能)

生产厂家

MMBR911LT1

NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR

Advanced Power Technology  

MMBR911LT1

MMBR911LT1G

FUNCTIONAL TESTS

Symbol

Test Conditions

Gain @ Noise Figure

GNF

(IC=10 mAdc, VCE=10 Vdc)

Noise Figure

NF

(IC=10 mAdc, VCE=10 Vdc)

Value

Unit

Min.

Typ.

Max.

f=0.5 GHz

-

17

-

dB

f=1.0 GHz

-

11

-

f=0.5 GHz

-

2.0

-

dB

f=1.0 GHz

-

2.9

-

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Rev A 9/2005

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