MMBT2907A 查看數據表（PDF） - Galaxy Semi-Conductor
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MMBT2907A Datasheet PDF : 4 Pages
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BL Galaxy Electrical
Production specification
PNP General Purpose Amplifier
MMBT2907A
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-10μA IE=0
-60
V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA IB=B 0
-60
Emitter-base breakdown voltage
V(BR)EBO IE=-10μA IC=0
-5
Collector cut-off current
ICBO
VCB=-50V IE=0
Collector cut-off current
Emitter cut-off current
ICEO
IEBO
VCE=-3V IB=B 0
VCE=-3V IC=0
DC current gain
hFE
VCE=-10V IC=-150mA 100
VCE=-10V IC=-1mA
50
Collector-emitter saturation voltage VCE(sat) IC=-500mA IB=B -50mA
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC=-500mA IB=B -50mA
VCE=-20V IC=-50mA 200
f=100MHz
Delay time
Rise time
Storage time
Fall time
td
VCE=-30V, IC=-150mA,
tr
IB1= -IB2=-15mA
ts
VCE=-6V, IC=-150mA
tf
IB1=-IB2=-15mA
V
μV
-0.1 μA
-0.1 μA
-0.1 μA
300
-1 V
-2 V
MHz
10 ns
40 ns
80 ns
30 ns
Document number: BL/SSSTC072
Rev.A
www.galaxycn.com
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