MMBT2907A 查看數據表（PDF） - TAITRON Components Incorporated
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MMBT2907A Datasheet PDF : 3 Pages
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SMD General Purpose Transistor (PNP)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
MMBT2907A
Symbol
Description
hFE
D.C. Current Gain
-ICBO
-ICEX
-IBEX
-VCEsat
Collector Cut–Off Current
Base Current with Reverse Biased Emitter
Junction
Collector-Emitter Saturation Voltage
-VBEsat Base-Emitter Saturation Voltage
-V(BR)CEO
-V(BR)CBO
-V(BR)EBO
fT
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Current Gain-Bandwidth Product
Co
Output Capacitance
Ci
Input Capacitance
ton
Turn on Time
td
Delay Time
tr
Rise Time
toff
Turn-Off Time (ts + tf)
ts
Storage Time
tf
Fall Time
Min.
75
100
100
100
50
-
-
-
-
-
-
-
-
60
60
5.0
200
-
-
-
-
-
-
-
-
Max.
-
-
300
-
10
10
50
50
0.4
1.6
1.3
2.6
-
-
-
-
8.0
30
45
10
40
100
80
30
Unit
nA
µA
nA
nA
V
V
V
V
V
MHz
pF
pF
ns
Conditions
-VCE=10V, -IC=0.1mA
-VCE=10V, -IC=1mA
-VCE=10V, -IC=10mA
-VCE=10V, -IC=150mA
-VCE=10V, -IC=500mA
-VCB=50V, IE=0
-VCB=50V, IE=0, Tj=125° C
-VEB=0.5V, -VCE=30V
-VEB=3V, -VCE=30V
-IC=150mA, -IB=15mA
-IC=500mA, -IB=50mA
-IC=150mA, -IB=15mA
-IC=500mA, -IB=50mA
-IC=10mA, IB=0
-IC=10µA, IE=0
-IE=10µA, IC=0
-VCE=20V, -IC=50mA,
f=100MHz
-VCB=10V, f=1.0MHz,
IE=0
-VEB=2.0V, f=1.0MHz,
IC=0
-IB=15mA
-IC=150mA
-VCC=30V
-IB=15mA
ns
-IC=150mA
-VCC=6V
www.taitroncomponents.com
Rev. A/AH 2007-10-11
Page 2 of 3
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