MMBT2907AWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain (1)
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)
(IC = –500 mAdc, VCE = –10 Vdc)
Collector – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
Base – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
SMALL– SIGNAL CHARACTERISTICS
HFE
—
75
—
100
—
100
—
100
—
50
—
VCE(sat)
—
—
Vdc
–0.4
–1.6
VBE(sat)
—
—
Vdc
–1.3
–2.6
Current – Gain — Bandwidth Product
(IC = –50 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
fT
200
—
MHz
Cobo
—
8.0
pF
Cibo
—
30
pF
Turn–On Time
Delay Time
Rise Time
(VCC = –30 Vdc,
IC = –150 mAdc, IB1 = –15 mAdc)
Storage Time
Fall Time
Turn–Off Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = 15 mAdc)
v v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
ton
—
45
td
—
10
tr
—
40
ns
ts
—
80
tf
—
30
toff
—
100
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data