WILLAS
FM120-M+
MMBT2907AWTTH1RU
1.0GA SeURnFeACrEaMlOPUNuT SrCpHoOTsTKeY BTArRaRnIERsRiEsCtToIFIrERS -20V- 200V
SOD-123+ PACKAGE
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
bEeLttEerCrTeRveICrsAeLleCakHaAgRe AcuCrTreEnRt IaSnTdICthSer(mT aAl =re2s5i°sCtaunnclees. s otherwise noted) (Continued)
SOD-123H
• Low profile surface mounted application in order to
optimize board spaceC. haracteristic
Symbol
Min
Max
Unit
• LOowNpCoHwAerRlAosCsT, EhiRghISeTfIfCicSiency.
• High DcuCrrCeunrtrecnatpGaabinil(i1ty), low forward voltage drop.
hFE
0.146(3.7)
0.130(3.3)
–– 0.012(0.3) Typ.
• High (sIuCr=g–e0c.1apmaAbdicli,tyV. CE =–10 Vdc)
75
––
• Guar(dIrCin=g–f1o.r0omvAedrvco, lVtaCgEe= p–r1o0teVcdtcio) n.
• Ultra (hI iCg=h-–s1p0emedAdscw, iVtcChEi=ng–.10 Vdc)
• Silico(nI Ce=p–it1a5x0iaml Apdlacn, aVrCcEh=ip–,1m0Vedtca)l silicon junction.
• LMeIaLd-S(-IfTrCeD=e-–1p59a05r0t0sm0mA/2dec2e,8tVenCEv=ir–o1n0mVednct)al standards of
• RoHSCporloledcutcotr–foErmpiattcekriSngatcuoradteiosnuVffoixlta"Gge"(1)
100
100
100
50
VCE(sat)
––
0.071(1.8)
––
0.056(1.4)
––
––
Vdc
Halog(eI nC =fre–e15p0romduAcdtcf,oIr Bp=ac–k1in5gmcAoddce) suffix "H"
––
–0.4
Mech(I Ca=n–i5c00amlAddca, ItBa= –50 mAdc)
––
–1.6
Base–Emitter Saturation Voltage(1)
• Epoxy : UL94-V0 rated flame retardant
(I C = –150 mAdc, I B = –15mAdc)
• Case(I: CM=o–ld5e0d0mplAadsct,icI,BS=O–D50-1m2A3dHc )
,
• Terminals :Plated terminals, solderable per MIL-STD-750
y SMALL–SIGNAL CHARACTERISTICS
Method 2026
r •
Current–Gain — Bandwidth Product(4)
Polarity : Indicated by cathode band
(I C = –50mAdc, V CE= 20Vdc, f = 100MHz)
a • MounOtiuntgpuPtoCsaiptiaocnita: nAcney
• Weig(hVt :CBA=pp–r1o0xVimdca,teI dE =00.0, 1f 1=g1r.a0mMHz)
V BE(sat)
––
0.031(0.8) Typ.
––
–1.3
–2.6
0.04V0(d1.c0)
0.024(0.6)
0.031(0.8) Typ.
f
T
C
obo
Dimens2io0n0s in inches and––(millimeters)MHz
––
8.0
pF
in Input Capacitance
MAXIMUM RATINGS AND ELECTRICAL CHARACTERCISTICS ––
Ratings
at
(V
25℃
aEBm=bi–e2n.t0tVedmcp, eI rCa=tu0re, fu=nl1e.s0sMoHthze)rwise
specified.
ibo
Single phaSsWe hITalCf wHaINveG, 6C0HHzA,RreAsCistTivEeRoIfSinTdIuCcStive load.
30
pF
For capacitive Tlouarnd–, OdenraTtime ecurrent by 20% (V CC = –30 Vdc,
t on
—
45
lim Delay TRimAeTINGS
I C = –1S50YMmBAOdLc,FIMB112=0-–M1H5FmM1A3d0c-M) H FM140-Mt Hd FM150-MH FM—160-MH FM180-M1H0 FM1100-MHnFsM1150-MH FM1200-MH UNIT
Marking Code Rise Time
12
13
14 t r 15
1—6
18 40 10
115 120
Maximum RecurSretonrtaPgeeakTiRmeeverse Voltage
(V CC = –V6R.0RMVdc, 20
30
40 t s 50
—60
80 80 100
150
200 Volts
e Maximum RMS VFoalltlaTgime e
I C = –15V0RMmSAdc,I B11 =4 I B2 = 1251mAdc) 28 t f 35
—42
Turn–Off Time
r Maximum
DC
Blocking Voltage
1. Pulse Test: Pulse
Width
<300
µs,
DuVtDyCCycle
<202.0%.
30
40 t off 50
—
60
56 30 70
100
80
100
ns 105
150
140 Volts
200 Volts
P Maximum Average Forward Rectified Current
IO
1.0
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
30
Amps
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
℃/W
Typical Junction Capacitance (Note 1)
CJ
120
PF
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
IR
0.5
mAmps
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
201220-1112-06
WILWLAILSLAESLEECLTERCOTRNOICNICCOCROPR.P.