MMBT3904(2002) 查看數據表（PDF） - Infineon Technologies

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MMBT3904
(Rev.:2002)

NPN Silicon Switching Transistor

Infineon Technologies 

NPN Silicon Switching Transistor

High DC current gain: 0.1mA to 100mA

Low collector-emitter saturation voltage

Complementary type: SMBT3906 (PNP)

SMBT3904/ MMBT3904

3

2

1 VPS05161

Type

Marking

Pin Configuration

SMBT3904/ MMBT3904 s1A

1=B

2=E

3=C

Package

SOT23

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

DC collector current

Total power dissipation, TS = 69 °C

Junction temperature

Storage temperature

Symbol

VCEO

VCBO

VEBO

IC

Ptot

Tj

Tstg

Value

40

60

6

200

330

150

-65 ... 150

Thermal Resistance

Junction - soldering point1)

RthJS

245

1For calculation of RthJA please refer to Application Note Thermal Resistance

Unit

V

mA

mW

°C

K/W

1

Feb-18-2002

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