MMBT4403 查看數據表（PDF） - PANJIT INTERNATIONAL
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MMBT4403 Datasheet PDF : 4 Pages
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MMBT4403
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE 40V
POWER 225mW
FEATURES
PNP epitaxial silicon, planar design
Collector-emitter voltage VCE = -40V
Collector current IC =-600mA
Complimentary (NPN) device: MMBT4401
MECHANICAL DATA
Case: SOT-23
Terminals: Solderable per MIL-STD-202, Method 208
Approx Weight: 0.02 grams
Marking: M3A
Top View
3
Collector
1
BASE
3
COLLECTOR
1
Base
2
Emitter
2
EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter – Base Voltage
Collector Current - Continuous
Max Power Dissipation (Note 1)
Junction and Storage Temperature Range
SYMBOL
VCE0
VCB0
VEB0
IC
PTOT
TJ, TSTG
VALUE
-40
-40
-5.0
-600
225
-55 to 150
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
Thermal Resistance , Junction to Ambient (Note 1) RθJ A
556
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. using minimum recommended pad.
UNIT
V
V
V
mA
mW
℃
UNIT
℃/W
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