MMBT5401(2011) 查看數據表（PDF） - Unisonic Technologies
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MMBT5401 Datasheet PDF : 4 Pages
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MMBT5401
■ TYPICAL CHARACTERICS
Fig.1 Collector Output Capacitance
20
16
f=1MHz
IE=0
12
8
4
0
-100
-101
-102
Collector-Base Voltage, VCB (V)
Fig.3 Base-Emitter on Voltage
-103
VCE=-5V
-102
-101
-100
0
-0.2
-0.4
-0.6
-0.8 -1.0
Base-Emitter Voltage, VBE (V)
Fig.5 Current Gain-Bandwidth
Product
103
VCE=-10V
102
101
100
-10-1
-100
-101
-102
-103
Collector Current, Ic (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PNP SILICON TRANSISTOR
Fig.2 DC Current Gain
103
VCE=-5V
102
101
100
-10-1
-100
-101
-102
-103
Collector Current, Ic (mA)
Fig.4 Saturation Voltage
-101
Ic=10*IB
-100
VBE(SAT)
-10-1
VCE(SAT)
-10-2
-10-1
-100
-101
-102
-103
Collector Current, Ic (mA)
3 of 4
QW-R206-011.G
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