MMBT5401L 查看數據表（PDF） - Unisonic Technologies

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MMBT5401L

HIGH VOLTAGE SWITCHING TRANSISTOR

Unisonic Technologies 

MMBT5401

PNP EPITAXIAL SILICON TRANSISTOR

ABSOLUATE MAXIUM RATINGS (Ta = 25℃)

PARAMETER

Collector -Base Voltage

Collector -Emitter Voltage

Emitter -Base Voltage

DC Collector Current

Power Dissipation

Operating Temperature

Storage Temperature

SYMBOL

VCBO

VCEO

VEBO

IC

PD

TJ

TSTG

RATINGS

-160

-150

-5

-600

350

+150

-40 ~ +150

UNIT

V

V

V

mA

mW

℃

℃

ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-Base Breakdown Voltage

VCBO IC=-100µA, IE=0

Collector-Emitter Breakdown Voltage VCEO IC=-1mA, IB=0

Emitter-Base Breakdown Voltage

VEBO IE=-10µA, IC=0

Collector Cut-off Current

ICBO VCB=-120V, IE=0

Emitter Cut-off Current

IEBO VBE=-3V, Ic=0

VCE=-5V, Ic=-1mA

DC Current Gain(note)

hFE VCE=-5V, Ic=-10mA

VCE=-5V, Ic=-50mA

Collector-Emitter Saturation Voltage

VCE(sat)

IC=10mA, IB=1mA

IC=50mA, IB=5mA

Base-Emitter Saturation Voltage

VBE(sat)

IC=-10mA, IB=-1mA

IC=-50mA, IB=-5mA

Current Gain Bandwidth Product

fT VCE=-10V, Ic=-10mA, f=100MHz

Output Capacitance

Cob VCB=-10V, IE=0, f=1MHz

Noise Figure

NF

Note: Pulse test: PW<300µs, Duty Cycle<2%

IC=-0.25mA, VCE=-5V

RS=1kΩ, f=10Hz ~ 15.7kHz

MIN

-160

-150

-6

80

80

80

100

TYP MAX UNIT

V

V

V

-50 nA

-50 nA

400

-0.2

-0.5

V

1

1

V

400 MHz

6.0 pF

8

dB

CLASSIFICATION OF hFE

RANK

RANGE

A

80-170

B

150-240

C

200-400

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2

QW-R206-011.C

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