MMBT5401L 查看數據表（PDF） - Unisonic Technologies

零件编号

产品描述 (功能)

生产厂家

MMBT5401L

HIGH VOLTAGE SWITCHING TRANSISTOR

Unisonic Technologies 

MMBT5401

■ TYPICAL CHARACTERICS

PNP EPITAXIAL SILICON TRANSISTOR

Fig.1 Collector output Capacitance

20

16

f=1MHz

IE=0

12

8

4

0

-100

-10 1

-102

Collector-Base voltage (V)

Fig.3 Base-Emitter on Voltage

-103

VCE=-5V

-102

Fig.2 DC current Gain

103

VCE=-5V

102

101

100

-10-1

-100

-101

-102

-103

Ic,Collector current (mA)

Fig.4 Saturation voltage

-101

Ic=10*IB

-100

VBE(sat)

-10 1

-100

0

-0 .2

- 0 .4

-0.6

-0.8 -1.0

Base-Emitter voltage (V)

Fig.5 Current gain -bandwidth

product

103

VCE=-10V

102

-10-1

VCE(sat )

-10-2

-10-1

-100

-101

-102

-103

Ic,Collector current (mA)

101

100

-10-1

-100

-10 1

-102

-103

Ic,Collector current (mA)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3

QW-R206-011.C

Share Link: