MMBT5550 查看數據表（PDF） - KEXIN Industrial

零件编号

产品描述 (功能)

生产厂家

MMBT5550

High Voltage Transistors

KEXIN Industrial 

SMD Type

MMBT5550

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Collector?emitter breakdown voltage *

V(BR)CEO IC = 1.0 mA, IB = 0

Collector?base breakdown voltage

V(BR)CBO IC = 100 ìA, IE = 0

Emitter ?base breakdown voltage

V(BR)EBO IE = 10 ìA, IC = 0

Collector cutoff current

ICBO

VCB = 100 V, IE = 0

VCB = 100 V, IE = 0, Ta = 100

Emitter cutoff current

IEBO VEB = 4.0 V, IC = 0

IC = 1.0 mA, VCE = 5 V

DC current gain

hFE IC = 10 mA, VCE = 5 V

IC = 50 mA, VCE = 5 V

Collector-emitter saturation voltage

IC = 10 mA, IB = 1.0 mA

VCE(sat)

IC = 50 mA, IB = 5.0 mA

Base-emitter saturation voltage

IC = 10 mA, IB = 1.0 mA

VBE(sat)

IC = 50 mA, IB = 5.0 mA

Collector emitter cut-off

ICES

VCB = 10 V

VCB = 75 V

* Pulse Test: Pulse Width = 300 ìs, Duty Cycle=2.0%.

Marking

Marking

M1F

Transistors

Min Typ Max Unit

140

V

160

V

6

V

100 nA

100 ìA

50 nA

60

60

250

20

0.15 V

0.25 V

1.0 V

1.2 V

50 nA

100 nA

2 www.kexin.com.cn

Share Link: