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MMBTA42 查看數據表(PDF) - ComChip

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产品描述 (功能)
生产厂家
MMBTA42
ComChip
ComChip ComChip
MMBTA42 Datasheet PDF : 3 Pages
1 2 3
High Voltage Transistors
COMCHIP
www.comchiptech.com
ELECTRICAL CHARACTERISTICS (TA = 25OC unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
MMBTA42
MMBTA43
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MMBTA42
MMBTA43
Emitter −Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 3)
MMBTA42
MMBTA43
MMBTA42
MMBTA43
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
Both Types
Both Types
(IC = 30 mAdc, VCE = 10 Vdc)
MMBTA42
MMBTA43
Collector −Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
MMBTA42
MMBTA43
Base−Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
MMBTA42
MMBTA43
Symbol
Min
V(BR)CEO
300
200
V(BR)CBO
300
200
V(BR)EBO
6.0
ICBO
IEBO
hFE
25
40
40
40
VCE(sat)
VBE(sat)
fT
50
Ccb
Max
Unit
Vdc
Vdc
Vdc
mAdc
0.1
0.1
mAdc
0.1
0.1
Vdc
0.5
0.5
0.9
Vdc
MHz
pF
3.0
4.0
MDS0605002A
Page 2

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