MMDF3N02HD(2000) 查看數據表（PDF） - ON Semiconductor

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MMDF3N02HD
(Rev.:2000)

Power MOSFET 3 Amps, 20 Volts

ON Semiconductor 

MMDF3N02HD

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

20

–

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS (Note 2.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

IDSS

–

–

IGSS

–

VGS(th)

1.0

–

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 3.0 Adc)

(VGS = 4.5 Vdc, ID = 1.5 Adc)

RDS(on)

–

–

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)

gFS

2.0

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

–

Coss

–

Crss

–

SWITCHING CHARACTERISTICS (Note 3.)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(on)

–

tr

–

td(off)

–

tf

–

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

td(on)

–

tr

–

td(off)

–

tf

–

Gate Charge

See Figure 8

(VDS = 16 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

QT

–

Q1

–

Q2

–

Q3

–

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (Note 2.)

(IS = 3.0 Adc, VGS = 0 Vdc)

VSD

–

(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)

–

Reverse Recovery Time

See Figure 15

(IS = 3.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

–

ta

–

tb

–

Reverse Recovery Stored Charge

QRR

–

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.

Typ

Max

Unit

Vdc

–

–

29

–

mV/°C

µAdc

–

1.0

–

10

–

100

nAdc

1.5

4.0

0.058

0.074

3.88

2.0

–

0.090

0.100

–

Vdc

mV/°C

Ohms

Mhos

455

630

pF

184

250

45

90

11

22

ns

58

116

17

35

20

40

7.0

21

32

64

27

54

21

42

12.5

18

nC

1.3

–

2.8

–

2.4

–

0.79

1.3

Vdc

0.72

–

23

–

ns

18

–

5.0

–

0.025

–

µC

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