MMFT2406T1(2000) 查看數據表（PDF） - ON Semiconductor

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MMFT2406T1
(Rev.:2000)

Power MOSFET 700 mA, 240 Volts N–Channel SOT–223

ON Semiconductor 

MMFT2406T1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0, ID = 100 µA)

Zero Gate Voltage Drain Current

(VDS = 120 V, VGS = 0)

Gate–Body Leakage Current

(VGS = 15 Vdc, VDS = 0)

ON CHARACTERISTICS (Note 2.)

Gate Threshold Voltage

(VDS = VGS, ID = 1.0 mAdc)

Static Drain–to–Source On–Resistance

(VGS = 2.5 Vdc, ID = 0.1 Adc)

(VGS = 10 Vdc, ID = 0.5 Adc)

Drain–to–Source On–Voltage

(VGS = 10 V, ID = 0.5 A)

Forward Transconductance

(VDS = 6.0 V, ID = 0.5 A)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz)

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

Symbol

Min

V(BR)DSS

240

IDSS

–

IGSS

–

VGS(th)

0.8

RDS(on)

–

–

VDS(on)

–

gFS

300

Ciss

–

Coss

–

Crss

–

Max

Unit

–

Vdc

10

µAdc

100

nAdc

2.0

Vdc

Ohms

10

6.0

3.0

Vdc

–

mmhos

125

pF

50

20

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