MMSF7P03HDR2 查看數據表（PDF） - ON Semiconductor

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MMSF7P03HDR2

Power MOSFET

ON Semiconductor 

MMSF7P03HD

Preferred Device

Power MOSFET

7 A, 30 V, P−Channel SO−8

These miniature surface mount devices are designed for use in low

voltage, high speed switching applications where power efficiency is

important. Typical applications are DC−DC converters, and power

management in portable and battery powered products such as

computers, printers, cellular and cordless phones. They can also be

used for low voltage motor controls in mass storage products such as

disk drives and tape drives.

Features

• Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive − Can Be Driven by Logic ICs

• Miniature SO−8 Surface Mount Package − Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• IDSS Specified at Elevated Temperature

• Mounting Information for SO−8 Package Provided

• Pb−Free Package is Available

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

Vdc

Gate−to−Source Voltage

Continuous VGS

± 20

Vdc

Drain Current Continuous @ TA = 25°C

ID

Single Pulse (tp ≤ 10 ms) IDM

7.0

Adc

50

Apk

Source Current − Continuous @ TA = 25°C

IS

2.3

Adc

Total Power Dissipation @ TA = 25°C

(Note 1)

PD

2.5

W

Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C

Single Pulse Drain−to−Source Avalanche

EAS

Energy − Starting TJ = 25°C

(VDD = 30 Vdc, VGS = 5.0 Vdc,

VDS = 32 Vdc, IL = 10 Apk,

L = 10 mH, RG = 25 W)

500

mJ

Thermal Resistance, Junction−to−Ambient RqJA

50

°C/W

Maximum Temperature for Soldering

T

260

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. When mounted on 1 in square FR−4 or G−10 (VGS = 10 V @ 10 seconds)

© Semiconductor Components Industries, LLC, 2006

1

February, 2006 − Rev. 7

http://onsemi.com

7 A, 30 V − RDS(on) = 35 mW

D

P−Channel

G

S

MARKING

DIAGRAM

8

1

SO−8

CASE 751

STYLE 12

8

S7P03

AYWWG

G

1

S7P03 = Device Code

A

= Assembly Location

Y

= Year

WW = Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

PIN ASSIGNMENT

Source

Source

Source

Gate

18

27

36

45

Top View

Drain

Drain

Drain

Drain

ORDERING INFORMATION

Device

Package Shipping†

MMSF7P03HDR2

SO−8 2500 / Tape&Reel

MMSF7P03HDR2G SO−8 2500 / Tape&Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Publication Order Number:

MMSF7P03HD/D

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