MMSF7P03HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 2)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 5.3 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
Forward Transconductance (VDS = 15 Vdc, ID = 2.5 Adc)
DYNAMIC CHARACTERISTICS
RDS(on)
gFS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 24 Vdc, VGS = 0 V,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4)
Ciss
Coss
Crss
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
(VDD = 15 Vdc, ID = 1.0 Adc,
VGS = 4.5 Vdc, RG = 10 W)
(VDD = 15 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc, RG = 6.0 W)
(VDS = 10 Vdc, ID = 4.9 Adc,
VGS = 6.0 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
Forward On−Voltage
Reverse Recovery Time
(IS = 2.3 Adc, VGS = 0 Vdc)
(IS = 2.3 Adc, VGS = 0 Vdc,
TJ = 125°C)
(IS = 4.9 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
2. Negative sign for P−Channel device omitted for clarity.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
VSD
trr
ta
tb
QRR
Min
Typ
Max Unit
30
−
Vdc
−
mAdc
−
−
1.0
−
−
25
−
−
100 nAdc
1.0
−
Vdc
−
mW
−
26
35
−
42
50
−
12
−
Mhos
−
1200 1680
pF
−
580
810
−
160
220
−
23.5
47
ns
−
42.7 85.4
−
57.4 114.8
−
53.6 107.2
−
16
32
−
15.2 30.6
−
99.7 199.4
−
55.2 110.4
−
37.9 75.8
nC
−
4.2
−
−
11.5
−
−
7.6
−
−
0.76
1.2
Vdc
−
0.61
−
−
47.9
−
ns
−
27
−
−
21
−
−
0.052
−
mC
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