MMST4401 查看數據表（PDF） - Galaxy Semi-Conductor
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MMST4401 Datasheet PDF : 4 Pages
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Production specification
NPN Silicon Epitaxial Planar Transistor
MMST4401
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
60
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
6
V
Collector cut-off current
ICEX
VCE=35V,VEB(OFF)=0.4V
0.1 μA
Base cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
IBL
hFE
VCE(sat)
VBE(sat)
fT
VCE=35V, VEB(OFF)=0.4V
0.1 μA
VCE=1V,IC=0.1mA
VCE=1V,IC=1.0mA
VCE=1V,IC=10mA
VCE=1V,IC=150mA
VCE=2V,IC=500mA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
VCE=10V, IE=20mA
f=100MHz
20
40
80
100 300
40
0.4
V
0.75
0.95
V
1.2
250
MHz
Collector output capacitance
Cob
VCB=5V, IE=0,f=1MHz
6.5 pF
Delay time
Rise time
td
VCC=30V,VBE=2V,
IC=150mA,IB=15mA
tr
15 nS
20 nS
Storage time
Fall time
ts
VCC=30V,IC=150mA,
IB1=IB2=15mA
tf
225 nS
30 nS
F053
Rev.A
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