MPS2907A 查看數據表（PDF） - Secos Corporation.
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MPS2907A Datasheet PDF : 5 Pages
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Elektronische Bauelemente
MPS2907A
PNP Silicon
General Purpose Transistor
ƔELECTRICAL CHARACTERISTICS (TA = 25 к unless otherwise noted) (Continued)
CHARACTERISTIC
SYMBOL
Min.
Max.
ON CHARACTERISTICS
DC Current Gain
(IC = -0.1 mA, VCE = -10 V)
(IC = -1.0 mA, VCE = -10 V)
(IC = -10 mA, VCE = -10 V)
(IC = -150 mA, VCE = -10 V) (1)
(IC = -500 mA, VCE = -10 V) (1)
Collector - Emitter Saturation Voltage(1)
(IC = -150 mA, IB = -15 mA)
(IC = -500 mA, IB = -50 mA)
Base - Emitter Saturation Voltage(1)
(IC = -150 mA, IB = -15 mA)
(IC = -500 mA, IB = -50 mA)
75
-
hFE
50
100
-
-
100
300
50
-
VCE(sat)
-
-
-0.3
-1.0
VBE(sat)
-
-
-1.3
-2.0
SMALL - SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product(1) (2)
(IC = -50 mA, VCE = -20 V, f = 100 MHz)
fT
200
-
Output Capacitance
(VCB = -10 V, IE = 0, f = 1.0 MHz)
Cobo
-
8.0
Input Capacitance
(VEB = -2.0 V, IC = 0, f = 1.0 MHz)
Cibo
-
30
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
(VCC = -30 V, IC = -150 mA,
IB1 = -15 mA) (Figure 1 and 5)
ton
-
50
td
-
10
tr
-
40
Turn-Off Time
Storage Time
Fall Time
(VCC = -6.0 V, IC = -150 mA,
IB1 = IB2 = -15 mA) (Figure 2)
toff
-
110
ts
-
80
tf
-
30
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0 %.
2. fT is defined as the frequency at which | hfe | extrapolates to unity.
UNIT
-
V
V
MHz
pF
pF
ns
ns
ns
ns
ns
ns
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
0
-16 V
1.0 k
50
-30 V
200
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
200 ns
Figure 1. Delay and Rise Time Test Circuit
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
+15 V -6.0 V
1.0 k 37
0
-30 V
1.0 k
50
1N916
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
200 ns
Figure 2. Storage and Fall Time Test Circuit
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 5
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