MPS2907A 查看數據表（PDF） - Secos Corporation.
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MPS2907A Datasheet PDF : 5 Pages
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Elektronische Bauelemente
MPS2907A
PNP Silicon
General Purpose Transistor
ƔTYPICAL CHARACTERISTICS
3.0
VCE = -1.0 V
2.0
VCE = -10 V
1.0
0.7
0.5
0.3
0.2
-0.1
-0.2 -0.3 -0.5 -0.7 -1.0
TJ = 125°C
25°C
-ā55°C
-2.0 -3.0 -5.0 -7.0 -10
-20 -30
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
-50 -70 -100
-200 -300 -500
-1.0
-0.8
IC = -1.0 mA
-0.6
-10 mA
-100 mA
-500 mA
-0.4
-0.2
0
-0.005 -0.01
-0.02 -0.03 -0.05 -0.07 -0.1
-0.2 -0.3 -0.5 -0.7 -1.0
IB, BASE CURRENT (mA)
-2.0 -3.0
Figure 4. Collector Saturation Region
-5.0 -7.0 -10
-20 -30 -50
300
200
100
tr
70
50
VCC = -30 V
IC/IB = 10
TJ = 25°C
30
20
td @ VBE(off) = 0 V
10
7.0
5.0
2.0 V
3.0
-5.0 -7.0 -10
-20 -30 -50 -70 -100 -200 -300 -500
IC, COLLECTOR CURRENT
Figure 5. Turn–On Time
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
500
300
200
tf
100
70
50
30
t′s = ts - 1/8 tf
20
VCC = -30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
7.0
5.0
-5.0 -7.0 -10
-20 -30 -50 -70 -100 -200 -300 -500
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn–Off Time
Any changing of specification will not be informed individual
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