MRF158 查看數據表（PDF） - Tyco Electronics

零件编号

产品描述 (功能)

生产厂家

MRF158

Power Field Effect Transistor

Tyco Electronics 

SEMICONDUCTOR TECHNICAL DATA

The RF TMOS Line

Power Field Effect Transistor

N–Channel Enhancement Mode

Designed for wideband large–signal amplifier and oscillator applications to

500 MHz.

• Guaranteed 28 Volt, 500 MHz Performance

Output Power = 2.0 Watts

Minimum Gain = 16 dB (Min)

Efficiency = 55% (Typ)

• Facilitates Manual Gain Control, ALC and Modulation

Techniques

• 100% Tested for Load Mismatch at All Phase Angles with

30:1 VSWR

• Excellent Thermal Stability, Ideally Suited for Class A

Operation

Order this document

by MRF158/D

MRF158

To 500 MHz, 2 W, 28 V

TMOS

BROADBAND

RF POWER FET

D

G

S

CASE 305A–01, STYLE 2

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Drain–Gate Voltage (RGS = 1.0 MΩ)

Gate–Source Voltage

Drain Current — Continuous

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range

Operating Junction Temperature

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

VDSS

VDGR

VGS

ID

PD

Tstg

TJ

Symbol

RθJC

Value

65

65

±20

0.5

8.0

45

– 65 to +150

200

Max

13.2

Unit

Vdc

Vdc

Vdc

Adc

Watts

mW/°C

°C

°C

Unit

°C/W

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 9

1

Share Link: