MTD6N20ET4 查看數據表（PDF） - ON Semiconductor
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MTD6N20ET4 Datasheet PDF : 9 Pages
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MTD6N20E
Preferred Device
Power MOSFET
6 Amps, 200 Volts
N−Channel DPAK
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain−to−source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Features
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Pb−Free Package is Available*
http://onsemi.com
6 AMPERES, 200 VOLTS
RDS(on) = 460 mW
N−Channel
D
G
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
MARKING
DIAGRAMS
Drain−to−Source Voltage
VDSS
200
Vdc
4 Drain
Drain−to−Gate Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 10 ms)
Drain Current
− Continuous
− Continuous @ 100°C
− Single Pulse (tp ≤ 10 ms)
VDGR
200
Vdc
VGS
± 20 Vdc
VGSM
± 40
Vpk
ID
6.0
Adc
ID
3.8
IDM
18
Apk
12
3
4
DPAK
CASE 369C
STYLE 2
12 3
Gate Drain Source
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
PD
TJ, Tstg
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc,
IL = 6.0 Apk, L = 3.0 mH, RG = 25 W)
Thermal Resistance − Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Temperature for Soldering
Purposes, 1/8″ from case for 10 secs
EAS
RqJC
RqJA
RqJA
TL
50
0.4
1.75
−55 to
150
54
2.50
100
71.4
260
W
W/°C
W
°C
mJ
°C/W
°C
4
1
2
3
DPAK
CASE 369D
STYLE 2
4 Drain
123
6N20E Device Code
Gate Drain Source
Y
= Year
WW = Work Week
G
= Pb−Free Package
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using the 0.5 sq. in. drain pad size.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev. 3
Publication Order Number:
MTD6N20E/D
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