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MTD6N20ET4 查看數據表(PDF) - ON Semiconductor

零件编号
产品描述 (功能)
生产厂家
MTD6N20ET4
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MTD6N20ET4 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
MTD6N20E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 200 Vdc, VGS = 0 Vdc)
(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 3.0 Adc)
Drain−Source On−Voltage (VGS = 10 Vdc)
(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 100 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc,
RG = 9.1 W)
Gate Charge
(See Figure 8)
(VDS = 160 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 3)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
Reverse Recovery Time
(See Figure 14)
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
LD
LS
Min
Typ
Max Unit
200
689
Vdc
mV/°C
mAdc
10
100
100 nAdc
2.0
3.0
4.0
Vdc
7.1
mV/°C
0.46 0.700 Ohm
Vdc
2.9
5.0
4.4
1.5
mhos
342
480
pF
92
130
27
55
8.8
17.6
ns
29
58
22
44
20
40.8
13.7
21
nC
2.7
7.1
5.9
Vdc
0.99
1.2
0.9
138
ns
93
45
0.74
mC
4.5
nH
7.5
nH
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