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MTP10N10EL 查看數據表(PDF) - ON Semiconductor

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MTP10N10EL
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MTP10N10EL Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MTP10N10EL
SAFE OPERATING AREA
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
10 ms
100 ms
1
0.1
0.1
1 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 ms
dc
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
ID = 10 A
40
30
20
10
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.001
0.01
0.1
t, TIME (SECONDS)
Figure 13. Thermal Response
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
1
10
IS
tp
di/dt
trr
ta
tb
0.25 IS
IS
TIME
Figure 14. Diode Reverse Recovery Waveform
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