MUR420-E3(2007) 查看數據表（PDF） - Vishay Semiconductors
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MUR420-E3 Datasheet PDF : 4 Pages
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MUR420
Vishay General Semiconductor
100
TJ = 175 °C
10
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
1000
100
10
1
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
1000
100
TJ = 175 °C
10
TJ = 100 °C
1
0.1
0.01
TJ = 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Document Number: 88685 For technical questions within your region, please contact one of the following:
Revision: 20-Aug-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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