MW7IC2220NR1(2008) 查看數據表（PDF） - Freescale Semiconductor

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MW7IC2220NR1
(Rev.:2008)

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 2 — Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate - Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IDSS

—

—

10

μAdc

IDSS

—

—

1

μAdc

IGSS

—

—

1

μAdc

Stage 2 — On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 150 μAdc)

Gate Quiescent Voltage

(VDS = 28 Vdc, IDQ2 = 300 mAdc)

Fixture Gate Quiescent Voltage

(VDD = 28 Vdc, IDQ2 = 300 mAdc, Measured in Functional Test)

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 1 Adc)

Stage 2 — Dynamic Characteristics (1)

Output Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

VGS(th)

1.2

2

2.7

Vdc

VGS(Q)

—

2.7

—

Vdc

VGG(Q)

7

8

12.5

Vdc

VDS(on)

0.2

0.39

1.2

Vdc

Coss

—

205

—

pF

Functional Tests (In Freescale Wideband 2110 - 2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 80 mA, IDQ2 = 300 mA,

Pout = 2 W Avg., f1 = 2112.5 MHz and f2 = 2167.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal

PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

Power Gain

Gps

29

31

34

dB

Power Added Efficiency

PAE

11

13

—

%

Adjacent Channel Power Ratio

ACPR

—

- 50

- 47

dBc

Input Return Loss

IRL

—

- 14

- 12

dB

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 80 mA, IDQ2 = 300 mA, 2110 - 2170 MHz

Pout @ 1 dB Compression Point, CW

P1dB

—

20

—

IMD Symmetry @ 18 W PEP, Pout where IMD Third Order

Intermodulation ` 30 dBc

IMDsym

—

40

—

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

W

MHz

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

70

—

MHz

Gain Flatness in 60 MHz Bandwidth @ Pout = 2 W Avg.

Average Deviation from Linear Phase in 60 MHz Bandwidth

@ Pout = 20 W CW

Average Group Delay @ Pout = 20 W CW, f = 2140 MHz

Part - to - Part Insertion Phase Variation @ Pout = 20 W CW,

f = 2140 MHz, Six Sigma Window

GF

—

0.6

—

dB

Φ

—

1.2

—

°

Delay

—

2.5

—

ns

ΔΦ

—

15

—

°

Gain Variation over Temperature

( - 30°C to +85°C)

ΔG

—

0.036

—

dB/°C

Output Power Variation over Temperature

( - 30°C to +85°C)

ΔP1dB

—

0.003

—

dBm/°C

1. Part internally matched both on input and output.

RF Device Data

Freescale Semiconductor

MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1

3

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