NDP03N60ZG 查看數據表（PDF） - ON Semiconductor
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NDP03N60ZG Datasheet PDF : 10 Pages
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NDF03N60Z, NDP03N60Z, NDD03N60Z
TYPICAL CHARACTERISTICS
10
TJ = 150°C
1.0
TJ = 125°C
0.10
0 50 100 150 200 250 300 350 400 450 500 550 600
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
versus Voltage
700
650
600
550
500
450
400
350
300
250
200
150
100
50 Crss
0
05
TJ = 25°C
VGS = 0 V
f = 1 MHz
Ciss
Coss
10 15 20 25 30 35 40 45 50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Capacitance Variation
15.0
350
14.0
13.0
QT
300
12.0
11.0
10.0
9.0
8.0
7.0
QGS
6.0
VDS
QGD
250
VGS
200
150
5.0
4.0
VDS = 300 V
100
3.0
ID = 3 A
2.0
TJ = 25°C
50
1.0
0.0
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
VDD = 300 V
ID = 3 A
VGS = 10 V
100
10.0
td(off)
tr
tf
td(on)
1.0
1
10
100
RG, GATE RESISTANCE (W)
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
10.0
TJ = 150°C
1.0
125°C
25°C
−55°C
0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Diode Forward Voltage versus
Current
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