NDF08N50Z 查看數據表（PDF） - ON Semiconductor
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NDF08N50Z Datasheet PDF : 6 Pages
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NDF08N50Z, NDP08N50Z
N-Channel Power MOSFET
500 V, 0.69 W
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF08N50Z NDP08N50Z Unit
Drain−to−Source Voltage
VDSS
500
V
Continuous Drain Current
ID
7.5 (Note 1)
7.5
A
RqJC
Continuous Drain Current
ID
4.7 (Note 1)
4.7
A
RqJC TA = 100°C
Pulsed Drain Current,
VGS @ 10 V
IDM
30 (Note 1)
30
A
Power Dissipation
PD
31
125
W
Gate−to−Source Voltage
VGS
30
V
Single Pulse Avalanche
EAS
Energy, ID = 7.5 A
190
mJ
ESD (HBM)
Vesd
(JESD 22−A114)
3500
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 14)
Peak Diode Recovery
VISO
dv/dt
4500
4.5
V
V/ns
Continuous Source
IS
Current (Body Diode)
7.5
A
Maximum Temperature for
TL
Soldering Leads
260
°C
Operating Junction and
TJ, Tstg
−55 to 150
°C
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. ISD = 7.5 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
http://onsemi.com
VDSS
500 V
RDS(ON) (TYP) @ 3.6 A
0.69 W
N−Channel
D (2)
G (1)
TO−220FP
CASE 221D
STYLE 1
S (3)
MARKING
DIAGRAM
TO−220AB
CASE 221A
STYLE 5
NDF08N50ZG
or
NDP08N50ZG
AYWW
Gate
Source
Drain
A
= Location Code
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
NDF08N50ZG
NDP08N50ZG
Package
TO−220FP
TO−220AB
Shipping
50 Units/Rail
In Development
© Semiconductor Components Industries, LLC, 2010
1
April, 2010 − Rev. 1
Publication Order Number:
NDF08N50Z/D
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