NDF08N50Z 查看數據表（PDF） - ON Semiconductor

零件编号

产品描述 (功能)

生产厂家

NDF08N50Z

N-Channel Power MOSFET 500 V, 0.69 Ω

ON Semiconductor 

NDF08N50Z, NDP08N50Z

THERMAL RESISTANCE

Parameter

Junction−to−Case (Drain)

Junction−to−Ambient Steady State (Note 3)

3. Insertion mounted

Symbol

RqJC

RqJA

NDF08N50Z

4.0

50

NDP08N50Z

1.0

50

Unit

°C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Test Conditions

Symbol

Min

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

VGS = 0 V, ID = 1 mA

BVDSS

500

Breakdown Voltage Temperature

Coefficient

Reference to 25°C,

ID = 1 mA

DBVDSS/

DTJ

Drain−to−Source Leakage Current

VDS = 500 V, VGS = 0 V

25°C

150°C

IDSS

Gate−to−Source Forward Leakage

ON CHARACTERISTICS (Note 4)

Static Drain−to−Source

On−Resistance

VGS = ±20 V

VGS = 10 V, ID = 3.6 A

IGSS

RDS(on)

Gate Threshold Voltage

Forward Transconductance

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS = VGS, ID = 100 mA

VDS = 15 V, ID = 3.75 A

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

Total Gate Charge

Gate−to−Source Charge

Gate−to−Drain (“Miller”) Charge

VDD = 250 V, ID = 7.5 A,

VGS = 10 V

Plateau Voltage

Gate Resistance

RESISTIVE SWITCHING CHARACTERISTICS

Turn−On Delay Time

Rise Time

Turn−Off Delay Time

VDD = 250 V, ID = 7.5 A,

VGS = 10 V, RG = 5 W

Fall Time

VGS(th)

3.0

gFS

Ciss

Coss

Crss

Qg

Qgs

Qgd

VGP

Rg

td(on)

tr

td(off)

tf

SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)

Diode Forward Voltage

IS = 7.5 A, VGS = 0 V

VSD

Reverse Recovery Time

Reverse Recovery Charge

VGS = 0 V, VDD = 30 V

trr

IS = 7.5 A, di/dt = 100 A/ms

Qrr

4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.

Typ

0.6

0.69

6.0

912

120

27

31

6.2

17

6.3

3.0

13

23

31

29

295

1.85

Max

1

50

±10

0.85

4.5

1.6

Unit

V

V/°C

mA

mA

W

V

S

pF

nC

V

W

ns

V

ns

mC

http://onsemi.com

2

Share Link: