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NDF08N60Z Datasheet PDF : 6 Pages
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NDF08N60Z, NDP08N60Z
N-Channel Power MOSFET
600 V, 0.95 W
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF08N60Z NDP08N60Z Unit
Drain−to−Source Voltage
VDSS
600
V
Continuous Drain Current
ID
7.5 (Note 1)
7.5
A
RqJC
Continuous Drain Current
ID
4.8 (Note 1)
4.8
A
RqJC TA = 100°C
Pulsed Drain Current,
VGS @ 10 V
IDM
30 (Note 1)
30
A
Power Dissipation
PD
35
139
W
Gate−to−Source Voltage
VGS
30
V
Single Pulse Avalanche
EAS
Energy, ID = 7.5 A
235
mJ
ESD (HBM)
Vesd
(JESD 22−A114)
4000
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 14)
Peak Diode Recovery
VISO
dv/dt
4500
4.5
V
V/ns
Continuous Source
IS
Current (Body Diode)
7.5
A
Maximum Temperature for
TL
Soldering Leads
260
°C
Operating Junction and
TJ, Tstg
−55 to 150
°C
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. ID v 7.5 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, TJ ≤ 150°C.
http://onsemi.com
VDSS
600 V
RDS(ON) (MAX) @ 3.5 A
0.95 W
N−Channel
D (2)
G (1)
TO−220FP
CASE 221D
STYLE 1
S (3)
MARKING
DIAGRAM
TO−220
CASE 221A
STYLE 5
NDF08N60ZG
or
NDP08N60ZG
AYWW
Gate
Source
Drain
A
= Location Code
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
July, 2010 − Rev. 0
Publication Order Number:
NDF08N60Z/D
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