NE521DG 查看數據表（PDF） - ON Semiconductor
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NE521DG Datasheet PDF : 7 Pages
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NE521
High−Speed
Dual−Differential
Comparator/Sense Amp
Features
• TTL-Compatible Strobes and Outputs
• Large Common-Mode Input Voltage Range
• Operates from Standard Supply Voltages
• Pb−Free Packages are Available
Applications
• MOS Memory Sense Amp
• A-to-D Conversion
• High-Speed Line Receiver
http://onsemi.com
MARKING
DIAGRAMS
14
SOIC−14
D SUFFIX
1
CASE 751A
NE521G
AWLYWW
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage
Positive
Negative
V
V+
+7.0
V−
−7.0
Differential Input Voltage
Input Voltage
Common Mode
Strobe/Gate
VIDR
"6.0
V
VIN
V
"5.0
+5.25
Maximum Power Dissipation (Note 1)
PD
TA = 25°C (Still−Air)
N Package
D Package
mW
1420
1040
Thermal Resistance, Junction−to−Ambient
N Package
D Package
RqJA
°C/W
100
145
Operating Temperature Range
TA
0 to 70
°C
Storage Temperature Range
Tstg −65 to +150 °C
Operating Junction Temperature
TJ
150
°C
Lead Soldering Temperature (10 sec max)
Tsld
+230
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Derate above 25°C at the following rates:
N package at 10 mW/°C
D package at 6.9 mW/°C.
14
1
PDIP−14
NE521N
N SUFFIX
AWLYYWWG
CASE 646
1
A = Assembly Location
WL = Wafer Lot
Y, YY = Year
WW = Work Week
G = Pb−Free Package
PIN CONNECTIONS
D, N Packages
INPUT 1A 1
INPUT 1B 2
NC 3
OUTPUT 1Y 4
STROBE 1G 5
STROBE S 6
GROUND 7
14 V+
13 V−
12 INPUT 2A
11 INPUT 2B
10 NC
9 OUTPUT 2Y
8 STROBE 2G
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
1
October, 2006 − Rev. 4
Publication Order Number:
NE521/D
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