NE521DR2G 查看數據表（PDF） - ON Semiconductor
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NE521DR2G Datasheet PDF : 7 Pages
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NE521
TYPICAL PERFORMANCE CHARACTERISTICS
4
3
100mV
2
1
20mV
0
100
50
0
VS = +5V
TA = 25oC
5mV
10mV
4
3
2 50mV
1 100mV
0
100
50
0
TA = 25oC
VS = +5V
12
5mV
10
10mV
8
6
4
2
0
5 10 15 20 25 30
TIME — nS
Figure 3. Response Time for
Various Input Overdrives
0
5 10 15 20 25 30
60
TIME — nS
Figure 4. Response Time for
Various Input Overdrives
TPD (LH)
TPD (HL)
20
−20
+60
+100 +140
AMBIENT TEMPERATURE (oC)
Figure 5. Response Time
vs. Temperature
VS = +5V
10MHz SQUARE
12
WAVE INPUT
TA = 25oC
TPD (LH)
10
8
TPD (HL)
6
10 20 30
40 50
60 70
INPUT VOLTAGE (mVp−p)
Figure 6. Propagation Delay
for Various Input Voltages
20
4.0
18
VS = +5V
10MHz SQUARE
VOH
16
WAVE INPUT
TA = 25oC
3.0
14
12
10
2.0
TPD (LH)
8
TPD (HL)
6
1.0
4
2
VOL
100
1000
−75
−25
+25
+75
+125
INPUT VOLTAGE (m Vp−p)
AMBIENT TEMPERATURE (oC)
Figure 7. Propagation Delay
for Various Input Voltages
Figure 8. Output Voltage vs.
Ambient Temperature
12
11
10
9
8
7
6
−75
−25
+25
+75
AMBIENT TEMPERATURE (oC)
+125
Figure 9. Input Bias Current
vs. Ambient Temperature
1.1
1.0
0.9
0.8
0.7
0.6
0.5
−75
−25
+25
+75
AMBIENT TEMPERATURES (oC)
+125
Figure 10. Input Offset
Current vs. Ambient
Temperature
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