NGA-386 查看數據表（PDF） - Sirenza Microdevices => RFMD
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NGA-386 Datasheet PDF : 5 Pages
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ObsoletePreliminary
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Key parameters, at typical operating frequencies:
Parameter
Typical
25ºC
Unit
Test Condition
(ID = 35mA, unless otherwise noted)
500 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
21.3
dB
25.1
dBm Tone spacing = 1 MHz, Pout per tone = 0dBm
14.6
dBm
26.8
dB
23.6
dB
850 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
20.9
dB
25.8
dBm Tone spacing = 1 MHz, Pout per tone = 0dBm
14.5
dBm
24.8
dB
23.4
dB
1950 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
18.9
dB
27.0
dBm Tone spacing = 1 MHz, Pout per tone = 0dBm
15.0
dBm
22.0
dB
22.2
dB
2400 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
18.0
dB
27.0
dBm Tone spacing = 1 MHz, Pout per tone = 0dBm
15.6
dBm
21.0
dB
21.6
dB
Absolute Maximum Ratings
Parameter
Absolute Limit
Max. Device Current (ID)
Max. Device Voltage (VD)
Max. RF Input Power
70 mA
6V
+10 dBm
Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Max. Storage Temp.
+150°C
-40°C to +85°C
+150°C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101103 Rev E
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