NGTB15N120FLWG(2013) 查看數據表（PDF） - ON Semiconductor

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NGTB15N120FLWG
(Rev.:2013)

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NGTB15N120FLWG

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Test Conditions

DIODE CHARACTERISTIC

Forward voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

VGE = 0 V, IF = 15 A

VGE = 0 V, IF = 15 A, TJ = 150°C

TJ = 25°C

IF = 15 A, VR = 400 V

diF/dt = 200 A/ms

Reverse recovery time

Reverse recovery charge

Reverse recovery current

TJ = 125°C

IF = 15 A, VR = 400 V

diF/dt = 200 A/ms

Symbol

Min

Typ

Max

Unit

VF

1.5

1.8

2.2

V

2.5

trr

−

166

−

ns

Qrr

−

1.1

−

mc

Irrm

−

12

−

A

trr

−

200

−

ns

Qrr

−

1.5

−

mc

Irrm

−

15

−

A

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