NGTB20N120IHSWG 查看數據表（PDF） - ON Semiconductor
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NGTB20N120IHSWG Datasheet PDF : 9 Pages
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NGTB20N120IHSWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
Features
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Case Temperature in IH Cooker Application
• Low Gate Charge
• These are Pb−Free Devices
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
1200
V
IC
A
40
20
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM
120
A
IF
A
40
20
Diode pulsed current, Tpulse limited
IFM
by TJmax
Gate−emitter voltage
VGE
Power Dissipation
PD
@ TC = 25°C
@ TC = 100°C
120
A
$20
V
W
156
62.5
Operating junction temperature
range
TJ
−55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150 °C
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
20 A, 1200 V
VCEsat = 2.10 V
Eoff = 0.65 mJ
C
G
E
G
C
E
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
20N120IHS
AYWWG
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB20N120IHSWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
1
September, 2012 − Rev. 0
Publication Order Number:
NGTB20N120IHS/D
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