NGTB20N120IHSWG 查看數據表（PDF） - ON Semiconductor
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NGTB20N120IHSWG Datasheet PDF : 9 Pages
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NGTB20N120IHSWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Symbol
RqJC
RqJC
RqJA
Value
0.80
2.0
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 15 V, IC = 20 A
VGE = 15 V, IC = 20 A, TJ = 150°C
VGE = VCE, IC = 50 mA
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
VGE = 20 V, VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 20 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
Fall time
Turn−off switching loss
TJ = 25°C
VCC = 600 V, IC = 20 A
Rg = 10 W
VGE = 0 V/ 15V
Turn−off delay time
Fall time
Turn−off switching loss
TJ = 125°C
VCC = 600 V, IC = 20 A
Rg = 10 W
VGE = 0 V/ 15V
DIODE CHARACTERISTIC
Forward voltage
VGE = 0 V, IF = 20 A
VGE = 0 V, IF = 20 A, TJ = 150°C
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
Qge
Qgc
td(off)
tf
Eoff
td(off)
tf
Eoff
VF
Min
1200
−
−
4.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
−
2.10
2.5
5.5
−
−
−
3600
90
65
155
30
70
160
160
0.65
167
205
1.20
1.55
1.65
Max
−
2.4
−
6.5
0.5
2.0
100
−
−
−
−
−
−
−
−
−
−
−
−
1.75
−
Unit
V
V
V
mA
nA
pF
nC
ns
mJ
ns
mJ
V
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