NGTB20N120IHSWG 查看數據表（PDF） - ON Semiconductor

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NGTB20N120IHSWG

IGBT

ON Semiconductor 

NGTB20N120IHSWG

0.1

50% Duty Cycle

20%

0.01 10%

5%

2%

1%

0.001

Single Pulse

0.0001

0.000001 0.00001

TYPICAL CHARACTERISTICS

RqJA = 0.8

Junction R1

Ci = ti/Ri

C1

R2

Rn Case Ri (°C/W) ti (sec)

0.03570 1.0E−4

0.08061 1.76E−4

0.140 0.002

0.190 0.03

C2

Cn

0.237 0.1

Duty Factor = t1/t2

Peak TJ = PDM x ZqJC + TC

0.114

2.0

0.0001

0.001

0.01

0.1

1

10

100

1000

PULSE TIME (sec)

Figure 19. IGBT Transient Thermal Impedance

10

50% Duty Cycle

1

20%

10%

5%

0.1

2%

1%

0.01

Single Pulse

0.001

0.000001 0.00001

RqJA = 2.0

Junction R1 R2

Ci = ti/Ri

C1 C2

Rn Case

Cn

Duty Factor = t1/t2

Peak TJ = PDM x ZqJC + TC

Ri (°C/W)

0.25813

0.577

0.671

0.387

0.1057

ti (sec)

1.48E−4

0.002

0.03

0.1

2.0

0.0001

0.001

0.01

0.1

1

10

PULSE TIME (sec)

Figure 20. Diode Transient Thermal Impedance

100

1000

Figure 21. Test Circuit for Switching Characteristics

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