NTE17 查看數據表（PDF） - NTE Electronics

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NTE17

Silicon Complementary Transistors Low Noise, General Purpose Amplifier

NTE Electronics 

NTE16 (NPN) & NTE17 (PNP)

Silicon Complementary Transistors

Low Noise, General Purpose Amplifier

Features:

D Low Collector Saturation Voltage

D Low Output Capacitance

D Low Noise

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA

Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C

Electrical Charactristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector–Emitter Breakdown Voltage

Collector–Base Breakdown Voltage

Emitter–Base Breakdown Voltage

V(BR)CEO IC = 1mA

V(BR)CBO IC = 50µA

V(BR)EBO IE = 50µA

Collector Cutoff Current

ICBO VCB = 30V

Emitter Cutoff Current

DC Current Gain

Collector–Emitter Saturation Voltage

NTE16

IEBO

hFE

VCE(sat)

VEB = 4V

VCE = 6V, IC = 1mA

IC = 50mA, IB = 5mA

NTE17

Transition Frequency

NTE16

fT

VCE = 12V, IE = 2mA

NTE17

Output Capacitance

NTE16

Cob

VCB = 12V, IE = 0, f = 1MHz

NTE17

Min Typ Max Unit

40 –

–

V

50 –

–

V

5

–

–

V

–

– 0.5 µA

–

– 0.5 µA

270 – 560

–

– 0.4 V

– 0.1 0.5 V

– 180 – MHz

– 140 – MHz

– 2.0 3.5 pF

– 4.0 5.0 pF

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