OM6012SA 查看數據表（PDF） - Unspecified

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OM6012SA

POWER MOSFETS IN HERMETIC ISOLATED TO-254AA PACKAGE

Unspecified 

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

STATIC P/N OM6009SA / OM6109SA

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source Breakdown

Voltage

VGS(th)

IGSSF

IGSSR

IGSS

IDSS

Gate-Threshold Voltage

Gate-Body Leakage Forward

Gate-Body Leakage Reverse

Gate-Body Leakage (OM6109)

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

100

V

2.0

4.0 V

100 nA

-100 nA

± 500 nA

0.1 0.25 mA

0.2 1.0 mA

22

A

1.275 1.425 V

VGS = 0,

ID = 250 mA

VDS = VGS, ID = 250 mA

VGS = 20 V

VGS = - 20 V

VGS = ± 12.8 V

VDS = Max. Rat., VGS = 0

VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

VDS 2 VDS(on), VGS = 10 V

VGS = 10 V, ID = 15 A

RDS(on) Static Drain-Source On-State

Resistance1

.085 .095

VGS = 10 V, ID = 15 A

RDS(on) Static Drain-Source On-State

Resistance1

.130 .155

VGS = 10 V, ID = 15 A,

TC = 125 C

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

STATIC P/N OM6010SA / OM6110SA

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source Breakdown

Voltage

VGS(th)

IGSSF

IGSSR

IGSS

IDSS

Gate-Threshold Voltage

Gate-Body Leakage Forward

Gate-Body Leakage Reverse

Gate-Body Leakage (OM6110)

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

200

V

2.0

4.0 V

100 nA

- 100 nA

± 500 nA

0.1 0.25 mA

0.2 1.0 mA

18

A

1.4 1.8 V

VGS = 0,

ID = 250 mA

VDS = VGS, ID = 250 mA

VGS = 20 V

VGS = - 20 V

VGS = ± 12.8 V

VDS = Max. Rat., VGS = 0

VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

VDS 2 VDS(on), VGS = 10 V

VGS = 10 V, ID = 10 A

RDS(on) Static Drain-Source On-State

Resistance1

0.14 0.18

VGS = 10 V, ID = 10 A

RDS(on) Static Drain-Source On-State

Resistance1

0.28 0.36

VGS = 10 V, ID = 10 A,

TC = 125 C

DYNAMIC

gfs

Ciss

Coss

Crss

Td(on)

tr

Td(off)

tf

Forward Transductance1

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

10.0

1275

550

160

16

19

42

24

S(W )

pF

pF

pF

VDS 2 VDS(on), ID = 15 A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 30 V, ID = 5 A

ns Rg = 5 W , VGS = 10 V

ns

(MOSFET) switching times are

essentially independent of

ns operating temperature.

DYNAMIC

gfs

Ciss

Coss

Crss

Td(on)

tr

Td(off)

tf

Forward Transductance1

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

6.0

1000

250

100

17

52

36

30

S(W )

pF

pF

pF

VDS 2 VDS(on), ID = 10 A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 75 V, ID @ 18 A

ns Rg = 5 W , VGS = 10 V

ns (MOSFET) switching times are

essentially independent of

ns operating temperature.

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

(Body Diode)

- 27 A Modified MOSPOWER D

symbol showing

IS

Continuous Source Current

(Body Diode)

- 18 A Modified MOSPOWER

D

symbol showing

ISM Source Current1

(Body Diode)

VSD Diode Forward Voltage1

trr

Reverse Recovery Time

- 108 A the integral P-N G

ISM Source Current1

Junction rectifier.

S

(Body Diode)

- 2.5 V TC = 25 C, IS = -24 A, VGS = 0 VSD Diode Forward Voltage1

200

ns TJ = 150 C,IF = IS,

trr

Reverse Recovery Time

dlF/ds = 100 A/ms

- 72 A the integral P-N G

-2

350

Junction rectifier.

S

V TC = 25 C, IS = -18 A, VGS = 0

ns TJ = 150 C,IF = IS,

dlF/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

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