STP14NF12 查看數據表（PDF） - STMicroelectronics

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STP14NF12

N-channel 120V - 0.16Ω- 14A - TO-220/TO-220FP Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STP14NF12 - STP14NF12FP

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

Drain-source voltage (VGS = 0)

VDGR

Drain-gate voltage (RGS = 20 kΩ)

VGS

Gate- source voltage

ID

Drain current (continuous) at TC = 25°C

ID

IDM(1)

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

Ptot

Total dissipation at TC = 25°C

Derating Factor

dv/dt (2) Peak diode recovery voltage slope

EAS (3) Single pulse avalanche energy

VISO

Insulation withstand voltage (DC)

Tstg

Storage temperature

Tj

Max. operating junction temperature

1. Pulse width limited by safe operating area.

2. ISD ≤14A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX

3. Starting Tj = 25 °C, ID = 14A, VDD = 50V

Value

TO-220

TO-220FP

120

120

± 20

14

8.5

9

6

56

34

60

25

0.4

0.17

9

60

--

2500

-55 to 175

Unit

V

V

V

A

A

A

W

W/°C

V/ns

mJ

V

°C

Table 2. Thermal data

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

TJ

Maximum lead temperature for soldering purpose

TO-220 TO-220FP

2.5

6

62.5

300

°C/W

°C/W

°C

3/14

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