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STP14NF12 查看數據表(PDF) - STMicroelectronics
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STP14NF12
N-channel 120V - 0.16Ω- 14A - TO-220/TO-220FP Low gate charge STripFET™ II Power MOSFET
STMicroelectronics
STP14NF12 Datasheet PDF : 14 Pages
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Electrical characteristics
2
Electrical characteristics
STP14NF12 - STP14NF12FP
(T
CASE
=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V
(BR)DSS
breakdown voltage
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
I
GSS
V
GS(th)
R
DS(on)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min.
I
D
= 250µA, V
GS
=0
120
V
DS
= max ratings
V
DS
= max ratings,
T
C
= 125°C
V
GS
= ± 20V
V
DS
= V
GS
, I
D
= 250µA
2
V
GS
= 10V, I
D
= 7A
Typ. Max. Unit
V
1
µA
10
µA
±100 nA
3
4
V
0.16 0.18
Ω
Table 4.
Symbol
Dynamic
Parameter
Test conditions
g
fs
(1)
Forward
transconductance
V
DS
= 15V, I
D
= 7A
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1MHz,
V
GS
= 0
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 50V, I
D
= 7A
R
G
= 4.7
Ω
V
GS
= 10V
(see
Figure 15
)
Q
g
Total gate charge
Q
gs
Gate-source charge
Q
gd
Gate-drain charge
V
DD
= 80V, I
D
= 14A,
V
GS
= 10V
(see
Figure 16
)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min. Typ. Max. Unit
4
S
460
pF
70
pF
30
pF
16
ns
25
ns
32
ns
8
ns
15.5 21
nC
3.7
nC
4.7
nC
4/14
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